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Process and device simulation for MOS-VLSI circuits

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Published by Nijhoff, Distributors for the U.S. and Canada, Kluwer Boston in Boston, Hingham, MA .
Written in English

Subjects:

  • Integrated circuits -- Very large scale integration -- Simulation methods -- Congresses.,
  • Metal oxide semiconductors -- Simulation methods -- Congresses.

Book details:

Edition Notes

Statementedited by Paolo Antognetti ... [et al.].
SeriesNATO ASI series., no. 62
ContributionsAntognetti, Paolo.
Classifications
LC ClassificationsTK7874 .N343 1982
The Physical Object
Paginationxii, 619 p. :
Number of Pages619
ID Numbers
Open LibraryOL3162205M
ISBN 10902472824X
LC Control Number83004018

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Process and Device Simulation for MOS-VLSI Circuits. Editors: Antognetti, P., Antoniadis, D.A., Dutton, R.W., Oldham, W.G. (Eds.) Free PreviewBrand: Springer Netherlands. Get this from a library! Process and Device Simulation for MOS-VLSI Circuits. [Paolo Antognetti; Dimitri A Antoniadis; Robert W Dutton; William G Oldham] -- P. Antognetti University of Genova, Italy Director of the NATO ASI The key importance of VLSI circuits is shown by the national efforts in this field taking place in several countries at differ­ ent. Proceedings of the NATO Advanced Study Institute on Process and Device Simulation for MOS-VLSI Circuits, Sogesta, Urbino, Italy, July , P. Antognetti University of Genova, Italy Director of the NATO ASI The key importance of VLSI circuits is shown by the national efforts in this field taking place in several countries at differ ent levels (government agencies, private. Process and Device Simulation for MOS-VLSI Circuits (NATO ASI (Advanced Science Institutes) Series E: Applied Sciences - No. 62) | P. Antognetti, D.A. Antoniadis, Robert W. Dutton, W.G. Oldham (Editors) | download | B–OK. Download books for free. Find books.

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