by Nijhoff, Distributors for the U.S. and Canada, Kluwer Boston in Boston, Hingham, MA .
Written in English
|Statement||edited by Paolo Antognetti ... [et al.].|
|Series||NATO ASI series., no. 62|
|LC Classifications||TK7874 .N343 1982|
|The Physical Object|
|Pagination||xii, 619 p. :|
|Number of Pages||619|
|LC Control Number||83004018|
Process and Device Simulation for MOS-VLSI Circuits. Editors: Antognetti, P., Antoniadis, D.A., Dutton, R.W., Oldham, W.G. (Eds.) Free PreviewBrand: Springer Netherlands. Get this from a library! Process and Device Simulation for MOS-VLSI Circuits. [Paolo Antognetti; Dimitri A Antoniadis; Robert W Dutton; William G Oldham] -- P. Antognetti University of Genova, Italy Director of the NATO ASI The key importance of VLSI circuits is shown by the national efforts in this field taking place in several countries at differ ent. Proceedings of the NATO Advanced Study Institute on Process and Device Simulation for MOS-VLSI Circuits, Sogesta, Urbino, Italy, July , P. Antognetti University of Genova, Italy Director of the NATO ASI The key importance of VLSI circuits is shown by the national efforts in this field taking place in several countries at differ ent levels (government agencies, private. Process and Device Simulation for MOS-VLSI Circuits (NATO ASI (Advanced Science Institutes) Series E: Applied Sciences - No. 62) | P. Antognetti, D.A. Antoniadis, Robert W. Dutton, W.G. Oldham (Editors) | download | B–OK. Download books for free. Find books.
Statistical Modeling for Computer-Aided Design of MOS VLSI Circuits describes a statistical circuit simulation and optimization environment for VLSI circuit designers. The first step toward accomplishing statistical circuit design and optimization is the development of an accurate CAD tool capable of performing statistical simulation. As MOS devices are scaled to meet increasingly demanding circuit specifications, process variations have a greater effect on the reliability of circuit performance. For this reason, statistical techniques are required to design integrated circuits with maximum yield. Statistical Modeling for Computer-Aided Design of MOS VLSI Circuits describes a statistical circuit simulation and optimization. The book concentrates on the analysis and simulation of large circuits which exceed the capabilities of general purpose analyzers in both compute time and storage. Also discussed are circuit models for switch level simulation, techniques and circuit models for interconnections, capacitance and inductances and optimization techniques. At the same time device simulation, dominantly two-dimensional owing to the nature of MOS devices, became the work-horse of technologists in the design and scaling of devices.   The transition from NMOS to CMOS technology resulted in the necessity of tightly coupled and fully 2D simulators for process and device simulations.
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